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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR BCW65ALT1 3 1 BASE MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value 32 60 5.0 800 2 EMITTER 1 2 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW65ALT1 = EA ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10mAdc, I B= 0 ) Collector-Emitter Breakdown Voltage (IC = 10 Adc, V EB = 0 ) Emitter-Base Breakdown Voltage (I E= 10 Adc, I C = 0) Collector Cutoff Current (VCE = 32 Vdc, IE = 0 ) (VCE = 32 Vdc, IE = 0 , TA = 150C) Emitter Cutoff Current (V EB= 4.0 Vdc, I C = 0) I EBO -- -- 20 nAdc V (BR)EBO V (BR)CEO 32 -- -- Vdc V (BR)CES 60 -- -- Vdc 5.0 -- -- Vdc I CES -- -- -- -- 20 20 nAdc Adc 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M11-1/2 LESHAN RADIO COMPANY, LTD. BCW65ALT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 75 100 35 V CE(sat) -- -- V BE(sat) Min Typ Max Unit -- ON CHARACTERISTICS DC Current Gain ( IC= 100 Adc, VCE = 10 Vdc ) ( IC= 10 mAdc, VCE = 1.0 Vdc ) ( IC= 100 mAdc, VCE = 1.0 Vdc ) ( IC= 500 mAdc, VCE = 2.0 Vdc ) Collector-Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) ( IC = 100 mAdc, IB = 10 mAdc ) Base-Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) -- -- -- -- 0.7 0.3 -- -- 220 250 -- Vdc -- -- Vdc -- 2.0 SMSMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product fT (I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance C obo (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) 100 -- -- -- -- -- -- -- -- 12 80 10 MHz pF pF dB SWITCHING CHARACTERISTICS Turn-On Time (I B1= I B2= 15 mAdc) Turn-Off Time (I C= 150 mAdc, R L = 150 ) t on t off -- -- -- -- 100 400 ns ns M11-2/2 |
Price & Availability of BCW65ALT1
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